Recent Radiation Test Results at JPL

This paper documents recent TID test results (including proton damage and ELDRS) obtained by JPL. Unusual test results, such as abnormally low or high failure levels or unusual failure or response mechnisms, are emphasized. W O E : In this paper summary, only a partial set of parts are listed and discussed. The final paper will list all parts tested for TID or proton damage over the past three years (approximately 50), except for proprietary tests.] INTRODUCTION This paper documents selected, recent TID radiation test results (including proton damage and ELDRS testing) obtained by the NASA Jet Propulsion Laboratory (JPL). This paper is not a full compendium, as it only covers the past three years of testing. Also, the emphasis in this paper is on unusual test results, such as exceptionally low or high TID failure levels or unusual failure or response mechanisms. DISCUSSION A significant number of semiconductor, photonic, and MEMS devices have been tested at JPL over the past few years. Table 1 provides a tabular summary of the parts tested, the conditions of the test, and the principal results. Parts are listed by manufacturer number (with any military prefixes omitted; see reports for more details). Note that the table only provides average (mean) dose or fluence levels, not “worstcase” values. Definitions of “worst case” vary, but the one normally preferred is 99/90, which is defined as 90% confidence (based on the sample size tested) that the survival probability of the lot is 299% at the specified dose or fluence. (Of course, for most parts, the term “lot” does not refer to wafer lot, but merely date code.) Individual test reports and data must be examined to determine “worst-case.” Unless otherwise noted, TID testing was performed at JPL’s Highor Low-Dose Rate Cobalt-60 gamma ray facilities, and proton testing was performed at UC Davis. In the following sections, a number of parts tested are briefly discussed. Additional data may be obtained through JPL’s RadNet website [1] or by contacting the author(s). 1N5665A Zener Diode (Microsemi). This JANTXlN5665A is a 200-V transient absorption zener diode. It was tested unbiased with 63-MeV protons at UC Davis to a fluence of 1.19 x 10” p/cm2 (corresponding to a dose of 16 krads). The purpose was to determine whether displacement damage would cause significant changes would occur in breakdown voltage, leakage current, or dynamic impedance in such a high-voltage device. All changes were very minor. The largest percerfage change was a 3% reduction in breakdown voltage. Leakage current remained within specifications, typically only rising -1 0 n * The research in this paper carried out at the Jet Propulsion Laboratory, Califomia Institute of Technology, under contract with the National Aeronautic and Space Administration (NASA) , under the NASA Electronic Parts and Packaging Program, Code AE.